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Vgs - Gate-Source Voltage :
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Factory Pack Quantity
FDS6986S
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RFQ
11,150
In-stock
onsemi MOSFET 30V Dual SyncFET 16 V, 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 2 Channel 4.9 mm 3.9 mm 1.75 mm 2 W Dual Si N-Channel 30 V 6.5 A 29 mOhms Enhancement 4.5 ns, 5 ns 2.5 ns, 11 ns 2 N-Channel 20 ns, 25 ns 7 ns, 8 ns     2500
TPCS8204
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RFQ
45,000
In-stock
Toshiba Semiconductor MOSFET 12 V SMD/SMT TSSOP-Advance-8 - 55 C + 150 C   2 Channel 3.65 mm 3.5 mm 0.75 mm 1.1 W Dual Si N-Channel 20 V 6 A 17 mOhms Enhancement 5 ns 10 ns            
SSM6N15FU
Per Unit
$0.080
RFQ
85,000
In-stock
Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type   SMD/SMT         2 Channel 2 mm 1.25 mm 0.9 mm   Dual Si N-Channel             2 N-Channel     MOSFETs MOSFET  
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