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16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Operating Supply Voltage | Memory Size | Maximum Clock Frequency | Interface Type | Organization | Supply Current - Max | Data Retention | |
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457
In-stock
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Toshiba | EEPROM 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58BVG2S3 | Tray | 3.3 V | 4 Gbit | Parallel | 512 M x 8 | |||||||
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1,065
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | |||||
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107
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | |||||
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GET PRICE |
2,650
In-stock
|
Toshiba | EEPROM 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TH58NVG2S3 | Tray | 3.3 V | 4 Gbit | Parallel | 512 M x 8 | ||||||
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75
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | |||||
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156
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TFBGA-63 | - 40 C | + 85 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | |||||
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180
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TFBGA-63 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | |||||
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140
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | |||||
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86
In-stock
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Toshiba | EEPROM 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58NVG2S3 | Tray | 3.3 V | 4 Gbit | Parallel | 512 M x 8 | |||||||
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96
In-stock
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Toshiba | EEPROM 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58BVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA | |||||
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89
In-stock
|
Toshiba | EEPROM 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TH58BVG2S3 | Tray | 3.3 V | 4 Gbit | Parallel | 512 M x 8 | |||||||
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2
In-stock
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Toshiba | EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58NVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA | |||||
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VIEW | Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | |||||
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VIEW | Toshiba | EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TH58NVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA | |||||
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VIEW | onsemi | EEPROM 64K-Bit CMOS PARA EEPROM | SMD/SMT | PLCC-32 | - 40 C | + 85 C | Tube | 3.3 V | 64 kbit | Parallel | 8 k x 8 | 8 mA | 100 Year | ||||||
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VIEW | onsemi | EEPROM (8kx8) 64k 3V 250ns | SMD/SMT | PLCC-32 | 0 C | + 70 C | Tube | 3.3 V | 64 kbit | Parallel | 8 k x 8 | 8 mA | 100 Year |