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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Configuration | Technology | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | DC Collector/Base Gain hfe Min | Continuous Collector Current | Transistor Type | |
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16
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | + 200 C | Tray | Si | NPN | 55 V | 4 V | 15 | 10 A | Bipolar Power | |||||
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5
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | SMD/SMT | Case 332A-03 | + 200 C | Tray | Si | NPN | 20 V | 3.5 V | 15 | 200 mA | Bipolar Power | ||||
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6
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | SOT-123 | + 200 C | Tray | Si | NPN | 35 V | 3 V | 15 | 12 A | Bipolar Power | ||||
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70
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | SOT-122A | + 200 C | Tray | Si | NPN | 25 V | 3.5 V | 15 | 2 A | Bipolar Power | ||||
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6
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | SOT-122A | + 200 C | Tray | Si | NPN | 30 V | 4 V | 15 | 3 A | Bipolar Power | ||||
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5
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | SOT-161A | + 200 C | Tray | Si | NPN | 27 V | 3.5 V | 15 | 2 A | Bipolar Power | ||||
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1
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | Case 316-01 | + 200 C | Tray | Si | NPN | 33 V | 4 V | 15 | 17.5 A | Bipolar Power | ||||
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77
In-stock
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ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | M177 | + 200 C | Tray | Si | NPN | 55 V | 4 V | 15 | 40 A | Bipolar Power | ||||
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80
In-stock
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MACOM | RF Bipolar Transistors 2-30MHz 150Watts 28Volt Gain 10dB | Screw | Case 211-11 | + 150 C | Tray | Single | Si | NPN | 40 V | 3 V | 15 | 20 A | Bipolar Power | |||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | M164 | + 150 C | Tray | Single Dual Emitter | Si | NPN | 55 V | 4 V | 15 | 10 A | Bipolar Power | |||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Screw | M175 | + 200 C | Tray | Si | NPN | 30 V | 3 V | 15 | 25 A | Bipolar Power | ||||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | SOT-147 | + 200 C | Tray | Si | NPN | 33 V | 4 V | 15 | 12.5 A | Bipolar Power | ||||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | Case 244-04 | + 200 C | Tray | Si | NPN | 24 V | 3.5 V | 15 | 0.7 A | Bipolar Power |
