- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Technology :
- Vgs - Gate-Source Breakdown Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
26
In-stock
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt | Screw | 440117 | + 130 C | Tube | 510 W | GaN | N-Channel | 150 V | 36 A | - 10 V to + 2 V | 17.1 dB | HEMT | - | |||
|
|
131
In-stock
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt | Screw | 440193 | + 150 C | Tube | 100 W | GaN | N-Channel | 150 V | 8.7 A | 2.7 V | 11 dB | HEMT | - | |||
|
|
20
In-stock
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt | Screw | 440162 | + 130 C | Tube | 330 W | GaN | N-Channel | 150 V | 18 A | - 10 V to + 2 V | 18.6 dB | HEMT | - | |||
|
|
4
In-stock
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt | Screw | 440193 | + 150 C | Tube | 170 W | GaN | N-Channel | 150 V | 12 A | - 10 V to + 2 V | 13.3 dB | HEMT | - | |||
|
|
10
In-stock
|
NXP Semiconductors | RF JFET Transistors Broadband RF power GaN HEMT | SMD/SMT | SOT1227B | + 150 C | Tube | GaN Si | N-Channel | 150 V | 5.1 A | 3 V | 13 dB | HEMT |
