PART NO.	PRICE	QUANTITY		MANUFACTURE	DESCRIPTION	Mounting Style	Maximum Operating Temperature	Packaging	Output Power	Pd - Power Dissipation	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Vgs - Gate-Source Breakdown Voltage	Gain	Transistor Type	Maximum Drain Gate Voltage
T1G2028536-FL	25+ $468.170	GET PRICE VIEW	PDF RFQ	Qorvo	RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN	SMD/SMT	+ 275 C	Tray	260 W	288 W	GaN SiC	N-Channel	36 V	24 A	145 V	20.8 dB	HEMT	48 V
T1G2028536-FS	25+ $468.170	GET PRICE VIEW	PDF RFQ	Qorvo	RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN	SMD/SMT	+ 250 C	Tray	260 W	288 W	GaN SiC	N-Channel	36 V	24 A	145 V	18 dB	HEMT	48 V
T1G4012036-FL	25+ $338.440	GET PRICE VIEW	PDF RFQ	Qorvo	RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak	SMD/SMT		Tray	24 W	117 W	GaN SiC	N-Channel	36 V	12 A		18.4 dB	HEMT	- 2.9 V
T1G4012036-FS	25+ $316.780	GET PRICE VIEW	PDF RFQ	Qorvo	RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak	SMD/SMT		Tray		117 W	GaN SiC	N-Channel	36 V	12 A		18.4 dB	HEMT	- 2.9 V