Build a global manufacturer and supplier trusted trading platform.
Pd - Power Dissipation :
Technology :
Vds - Drain-Source Breakdown Voltage :
Vgs - Gate-Source Breakdown Voltage :
Transistor Type :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
ATF-35143-TR1G
1+
$1.550
10+
$1.310
100+
$1.050
500+
$0.944
3000+
$0.708
RFQ
2,918
In-stock
Avago / Broadcom RF JFET Transistors Transistor GaAs Low Noise SMD/SMT SOT-343 + 160 C Reel 300 mW GaAs N-Channel 5.5 V 80 mA - 5 V 18 dB pHEMT
PMBFJ108,215
1+
$0.440
10+
$0.362
100+
$0.221
1000+
$0.171
3000+
$0.145
RFQ
5,201
In-stock
NXP Semiconductors RF JFET Transistors JFET N-CH 25V 6MA SMD/SMT SOT-23   Reel 250 mW Si N-Channel 25 V 80 mA - 25 V    
ATF-35143-BLKG
1+
$1.550
10+
$1.310
100+
$1.050
500+
$0.944
RFQ
4,778
In-stock
Avago / Broadcom RF JFET Transistors Transistor GaAs Low Noise SMD/SMT SOT-343 + 160 C Bulk 300 mW GaAs N-Channel 5.5 V 80 mA - 5 V 18 dB pHEMT
ATF-35143-TR2G
10000+
$0.627
VIEW
RFQ
Avago / Broadcom RF JFET Transistors Transistor GaAs Low Noise SMD/SMT SOT-343 + 160 C Reel 300 mW GaAs N-Channel 5.5 V 80 mA - 5 V 18 dB pHEMT
J108,126
10000+
$0.235
20000+
$0.225
50000+
$0.222
VIEW
RFQ
NXP Semiconductors RF JFET Transistors N-Channel Single '+/- 25V 80mA Through Hole TO-92   Ammo Pack 400 mW Si N-Channel 25 V 80 mA 25 V   JFET
Page 1 / 1