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Package / Case :
Output Power :
Technology :
Vds - Drain-Source Breakdown Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGHV1J070D
10+
$78.630
RFQ
60
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt SMD/SMT Die + 225 C Gel Pack 70 W GaN SiC N-Channel 100 V 6 A - 10 V to + 2 V 17 dB HEMT  
CGH60060D
10+
$99.980
RFQ
60
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt SMD/SMT Bare Die - Waffle 60 W GaN N-Channel 120 V 6 A - 10 V to + 2 V 13 dB HEMT -
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