- Maximum Operating Temperature :
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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
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400
In-stock
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Qorvo | RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm | SMD/SMT | + 150 C | Gel Pack | 0.89 W | GaAs | 8 V | 81 mA | - 15 V | 14 dB | pHEMT | 12 V | |||||||
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100
In-stock
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Qorvo | RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm | SMD/SMT | + 150 C | Gel Pack | 0.64 W | GaAs | 8 V | 58 mA | - 15 V | 14 dB | pHEMT | 12 V | |||||||
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2
In-stock
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Qorvo | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | SMD/SMT | + 85 C | Tray | 100 W | 86 W | GaN SiC | N-Channel | 32 V | 7.32 A | - 2.9 V | 14 dB | HEMT | 145 V | |||||
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645
In-stock
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CEL | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | SMD/SMT | FTSMM-4 (M04) | + 150 C | Reel | 175 mW | GaAs | N-Channel | 4 V | 120 mA | - 3 V | 14 dB | HFET | ||||||
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VIEW | MACOM | RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC | SMD/SMT | + 95 C | Reel | 10 W | 12 W | GaN SiC | N-Channel | 65 V | 500 mA | 14 dB | HEMT |