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Maximum Operating Temperature :
Output Power :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
Transistor Type :
Maximum Drain Gate Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
TGF2025
100+
$6.100
300+
$5.700
500+
$5.330
1000+
$4.980
2500+
$4.680
RFQ
400
In-stock
Qorvo RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm SMD/SMT   + 150 C Gel Pack   0.89 W GaAs   8 V 81 mA - 15 V 14 dB pHEMT 12 V
TGF2018
100+
$5.830
300+
$5.450
500+
$5.090
1000+
$4.760
2500+
$4.740
RFQ
100
In-stock
Qorvo RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm SMD/SMT   + 150 C Gel Pack   0.64 W GaAs   8 V 58 mA - 15 V 14 dB pHEMT 12 V
TGF2819-FS
1+
$351.000
25+
$316.780
RFQ
2
In-stock
Qorvo RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz SMD/SMT   + 85 C Tray 100 W 86 W GaN SiC N-Channel 32 V 7.32 A - 2.9 V 14 dB HEMT 145 V
NE3508M04-T2-A
1+
$1.690
10+
$1.320
100+
$1.060
500+
$0.848
3000+
$0.689
RFQ
645
In-stock
CEL RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET SMD/SMT FTSMM-4 (M04) + 150 C Reel   175 mW GaAs N-Channel 4 V 120 mA - 3 V 14 dB HFET  
MAGX-000035-01000TP
500+
$36.400
VIEW
RFQ
MACOM RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC SMD/SMT   + 95 C Reel 10 W 12 W GaN SiC N-Channel 65 V 500 mA   14 dB HEMT  
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