Build a global manufacturer and supplier trusted trading platform.
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
Maximum Drain Gate Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGHV27030S
1+
$51.100
250+
$51.100
RFQ
323
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt SMD/SMT 3x4 DFN + 150 C Reel 30 W 12 W GaN N-Channel 150 V 3.6 A - 10 V, 2 V 21 dB HEMT 50 V
CGH60030D
10+
$75.140
RFQ
130
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt SMD/SMT Bare Die - Waffle 30 W - GaN N-Channel 120 V 3 A - 10 V to + 2 V 15 dB HEMT -
Default Photo
10+
$98.090
RFQ
30
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt SMD/SMT     Gel Pack 30 W 28.8 W GaN N-Channel 120 V 3 A - 10 V, 2 V 12 dB HEMT 28 V
Default Photo
1+
$59.290
250+
$59.290
VIEW
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt SMD/SMT DFN + 150 C Reel 30 W 21.6 W GaN N-Channel 84 V 7 A - 10 V, 2 V 18 dB HEMT 28 V
Page 1 / 1