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Mounting Style :
Package / Case :
Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
Maximum Drain Gate Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGH40090PP
1+
$317.520
RFQ
59
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT DC-2.5GHz, 90 Watt Screw 440199 + 150 C Tube 100 W - GaN N-Channel 120 V 12 A - 10 V to + 2 V 12.5 dB HEMT -
CGHV40100F
1+
$346.960
RFQ
131
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt Screw 440193 + 150 C Tube 100 W - GaN N-Channel 150 V 8.7 A 2.7 V 11 dB HEMT -
TGF2819-FL
1+
$375.000
25+
$338.440
RFQ
1
In-stock
Qorvo RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz Screw   + 85 C Tray 100 W 86 W GaN SiC N-Channel 32 V 7.32 A - 2.9 V 14 dB HEMT 145 V
NPT2022
1+
$164.660
10+
$158.560
RFQ
4
In-stock
MACOM RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT Screw   + 85 C Tray 100 W   GaN Si N-Channel 160 V 24 mA 3 V 21 dB HEMT  
TGF2819-FS
1+
$351.000
25+
$316.780
RFQ
2
In-stock
Qorvo RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz SMD/SMT   + 85 C Tray 100 W 86 W GaN SiC N-Channel 32 V 7.32 A - 2.9 V 14 dB HEMT 145 V
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