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Pd - Power Dissipation :
Id - Continuous Drain Current :
Maximum Drain Gate Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGHV60075D5
10+
$53.570
RFQ
80
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt SMD/SMT Die - Gel Pack 75 W 41.6 W GaN N-Channel 150 V 10 A 150 V 17 dB HEMT -
Default Photo
250+
$154.180
VIEW
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt SMD/SMT SMD/SMT + 107 C Reel 75 W 52 W GaN N-Channel 150 V 10.4 A - 10 V, 2 V 14.5 dB HEMT 50 V
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