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Pd - Power Dissipation :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Transistor Type Maximum Drain Gate Voltage
2SK3557-6-TB-E
1+
$0.410
10+
$0.306
100+
$0.166
1000+
$0.125
3000+
$0.107
RFQ
2,081
In-stock
onsemi RF JFET Transistors LOW-FREQUENCY AMPLIFIER SMD/SMT SOT-23-3 + 150 C Reel 200 mW Si N-Channel 15 V 50 mA - 15 V JFET - 15 V
MMBF5484
1+
$0.380
10+
$0.242
100+
$0.104
1000+
$0.080
3000+
$0.061
RFQ
14,810
In-stock
Fairchild Semiconductor RF JFET Transistors NCh RF Transistor SMD/SMT SOT-23-3 + 150 C Reel 225 mW Si N-Channel   5 mA - 25 V JFET 25 V
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