- Package / Case :
- Pd - Power Dissipation :
- Id - Continuous Drain Current :
- Vgs - Gate-Source Breakdown Voltage :
- Gain :
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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
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23
In-stock
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Qorvo | RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN | SMD/SMT | NI780-2 | + 85 C | Waffle | 364 W | 83.5 W | GaN SiC | N-Channel | 48 V | 360 mA | 22 dB | HEMT | 55 V | |||||
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35
In-stock
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Qorvo | RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN | SMD/SMT | NI780-4 | + 85 C | Waffle | 36 W | 18.6 W | GaN SiC | N-Channel | 48 V | 210 mA | 16 dB | HEMT | 55 V | |||||
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51
In-stock
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Qorvo | RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN | SMD/SMT | QFN-16 | + 85 C | Waffle | 11 W | 13.5 W | GaN SiC | N-Channel | 50 V | 400 mA | 145 V | 24.7 dB | HEMT | |||||
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2
In-stock
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Qorvo | RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN | SMD/SMT | Flange Ceramic-2 | + 85 C | Waffle | 132 W | 140 W | GaN SiC | N-Channel | 50 V | 7.2 A | - 2.8 V | 17.4 dB | HEMT | |||||
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13
In-stock
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Qorvo | RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN | SMD/SMT | NI400-2 | + 85 C | Waffle | 180 W | 60.9 W | GaN SiC | N-Channel | 50 V | 360 mA | 22 dB | HEMT | 55 V |