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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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In-stock
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MACOM | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | Screw | + 85 C | Tray | 100 W | GaN Si | N-Channel | 160 V | 24 mA | 3 V | 21 dB | HEMT |
