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Manufacture :
Package / Case :
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
QPD1015L
1+
$135.000
25+
$117.000
100+
$101.000
RFQ
28
In-stock
Qorvo RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN Screw NI-360 + 85 C Tray 70 W 64 W GaN SiC N-Channel 50 V 2.5 A 145 V 20 dB HEMT  
QPD1008L
1+
$200.000
25+
$173.000
RFQ
25
In-stock
Qorvo RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN Screw NI-360 + 85 C Tray 162 W 127 W GaN SiC N-Channel 50 V 4 A 145 V 17.5 dB HEMT  
TGF2819-FL
1+
$375.000
25+
$338.440
RFQ
1
In-stock
Qorvo RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz Screw   + 85 C Tray 100 W 86 W GaN SiC N-Channel 32 V 7.32 A - 2.9 V 14 dB HEMT 145 V
NPT2022
1+
$164.660
10+
$158.560
RFQ
4
In-stock
MACOM RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT Screw   + 85 C Tray 100 W   GaN Si N-Channel 160 V 24 mA 3 V 21 dB HEMT  
NPT2021
1+
$83.160
10+
$80.080
RFQ
21
In-stock
MACOM RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT Screw TO-272 + 85 C Tray 45 W   GaN Si N-Channel 160 V 14 mA 3 V 14.2 dB HEMT  
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