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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
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28
In-stock
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Qorvo | RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN | Screw | NI-360 | + 85 C | Tray | 70 W | 64 W | GaN SiC | N-Channel | 50 V | 2.5 A | 145 V | 20 dB | HEMT | |||||
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25
In-stock
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Qorvo | RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN | Screw | NI-360 | + 85 C | Tray | 162 W | 127 W | GaN SiC | N-Channel | 50 V | 4 A | 145 V | 17.5 dB | HEMT | |||||
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1
In-stock
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Qorvo | RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz | Screw | + 85 C | Tray | 100 W | 86 W | GaN SiC | N-Channel | 32 V | 7.32 A | - 2.9 V | 14 dB | HEMT | 145 V | |||||
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4
In-stock
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MACOM | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | Screw | + 85 C | Tray | 100 W | GaN Si | N-Channel | 160 V | 24 mA | 3 V | 21 dB | HEMT | |||||||
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21
In-stock
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MACOM | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | Screw | TO-272 | + 85 C | Tray | 45 W | GaN Si | N-Channel | 160 V | 14 mA | 3 V | 14.2 dB | HEMT |