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Vgs - Gate-Source Voltage :
Number of Channels :
Pd - Power Dissipation :
Configuration :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
Factory Pack Quantity :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Product Category Factory Pack Quantity
FDS6986S
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RFQ
11,150
In-stock
onsemi MOSFET 30V Dual SyncFET 16 V, 20 V SMD/SMT SO-8 - 55 C + 150 C Cut Tape 2 Channel 4.9 mm 3.9 mm 1.75 mm 2 W Dual Si N-Channel 30 V 6.5 A 29 mOhms Enhancement 4.5 ns, 5 ns 2.5 ns, 11 ns 2 N-Channel 20 ns, 25 ns 7 ns, 8 ns   2500
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V SMD/SMT SC-62-3 - 55 C + 150 C Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms Enhancement 22 ns 36 ns 1 N-Channel       50
2SK3131
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RFQ
23,511
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Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... 30 V Through Hole TO-3PL-3 - 55 C + 150 C Reel 1 Channel 20 mm 5 mm 26 mm 250 W Single Si N-Channel 500 V 50 A 110 mOhms Enhancement 105 ns 65 ns   51 ns 20 ns MOSFET  
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