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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time
TPCS8204
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45,000
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Toshiba Semiconductor MOSFET 12 V SMD/SMT TSSOP-Advance-8 - 55 C + 150 C 2 Channel 3.65 mm 3.5 mm 0.75 mm 1.1 W Dual Si N-Channel 20 V 6 A 17 mOhms Enhancement 5 ns 10 ns
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