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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | Rise Time | Fall Time | Transistor Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | Product Category | unit weight | Factory Pack Quantity | |
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23,511
In-stock
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Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET | ||||||||
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35,000
In-stock
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Vishay | MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3 | SUP | Tube | Si | TrenchFET | MOSFET | 0.211644 oz | 50 | ||||||||||||||||||||||||
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85,000
In-stock
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Toshiba | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | SMD/SMT | 2 Channel | 2 mm | 1.25 mm | 0.9 mm | Dual | Si | N-Channel | 2 N-Channel | MOSFETs | MOSFET |
