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Manufacture :
Mounting Style :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
TGF2819-FL
1+
$375.000
25+
$338.440
RFQ
1
In-stock
Qorvo RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz Screw + 85 C Tray 100 W 86 W GaN SiC N-Channel 32 V 7.32 A - 2.9 V 14 dB HEMT 145 V
NPT2022
1+
$164.660
10+
$158.560
RFQ
4
In-stock
MACOM RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT Screw + 85 C Tray 100 W   GaN Si N-Channel 160 V 24 mA 3 V 21 dB HEMT  
TGF2819-FS
1+
$351.000
25+
$316.780
RFQ
2
In-stock
Qorvo RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz SMD/SMT + 85 C Tray 100 W 86 W GaN SiC N-Channel 32 V 7.32 A - 2.9 V 14 dB HEMT 145 V
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